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  Datasheet File OCR Text:
 Chip Schottky Barrier Diodes
FM820-B THRU FM860-B
Silicon epitaxial planer type
Formosa MS
SMB
0.213(5.4) 0.197(5.0) 0.016(0.4) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.142(3.6) 0.126(3.2)
0.173(4.4) 0.157(4.0)
0.075(1.9) 0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AA Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.00878 ounce, 0.293 gram
Dimensions in inches and (millimeters)
o MAXIMUM RATINGS (AT TA=25 C unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C IR Rq JA CJ TSTG -55 55 700 +150 CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 8.0 150 5.0 50
o
UNIT A A mA mA C/w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
C
SYMBOLS
MARKING CODE SK82 SK83 SK84 SK85 SK86
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C)
(V) FM820-B FM830-B FM840-B FM850-B FM860-B 20 30 40 50 60
(V) 14 21 28 35 42
(V) 20 30 40 50 60
(V)
*1 Repetitive peak reverse voltage *2 RMS voltage
0.65 -55 to +125 0.70
*3 Continuous reverse voltage *4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (FM820-B THRU FM860-B)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CHARACTERISTICS
12 10
50
INSTANTANEOUS FORWARD CURRENT,(A)
8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200
10
1.0
Tj=25 C Pulse Width 300us 1% Duty Cycle
CASE TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
250
0.1
PEAK FORWARD SURGE CURRENT,(A)
200
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLT AGE,(V)
150
Tj=25 C 8.3ms Single Half Sine Wave JEDEC method
100
50
FIG.5 - TYPICAL REVERSE
0 1 5 10 50 100
CHARACTERISTICS 100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
2800 2400 2000 1600 1200 800 400 0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
Tj=75 C
Tj=25 C
.1
.01
.05
.1
.5
1
5
10
50
100
.01 0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)


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